Lam Research (LRCX) is a publicly traded Lithography & Equipment company founded in 1980 and based in Fremont, USA.
| Date | Stage | Amount | Valuation | Lead investors |
|---|---|---|---|---|
| May 1, 1984 | IPO | — | — | — |
Cryogenic dielectric etch technology that chills the wafer to deep-subzero temperatures to etch ultra-high-aspect-ratio features with precise profile control. Lam Cryo 3.0, running on the Flex and Vantex etch platforms, is optimized for the device-critical channel-hole etch in 3D NAND scaling to 400+ layers. It is central to Lam's strong memory franchise as NAND makers push vertical stacking to feed AI storage demand.
A high-density, intelligent plasma-etch platform combining advanced conductor/dielectric etch with embedded sensors and equipment intelligence. Its compact architecture delivers high productivity and tight uniformity and profile control for both logic and memory roadmaps. Sense.i represents Lam's move to data-driven, self-optimizing process equipment for the most demanding patterning steps at leading-edge nodes.
Lam's market-leading tungsten and metallization deposition family combining CVD and ALD to form highly conformal films. The Edison-Award-winning ALTUS Halo is the first ALD system to deposit molybdenum atom-by-atom, replacing tungsten to cut interconnect resistance and ease scaling bottlenecks in advanced 3D memory and logic. ALTUS is a cornerstone of Lam's deposition portfolio for fill and metallization.
Plasma-enhanced CVD and ALD deposition systems for multilayer film stacks. The VECTOR Q Strata system deposits the alternating film stacks used to build 3D NAND memory cells, addressing critical stack-deposition steps that enable vertical memory scaling. VECTOR complements Lam's etch and metallization tools across the deposition steps of advanced logic and memory manufacturing.
488 patents on file, but none with both an extractable figure and an abstract on Google Patents yet.